He ke

Ke He
何珂

Department of Physics, Tsinghua University Beijing,100084

Email: kehe@mail.tsinghua.edu.cn

Phone: 86-10-62771704

EDUCATION  

Sept. 2000 - Mar. 2006 

Ph.D. in Physics   Institute of Physics, Chinese Academy of Sciences

Sept. 1996 - Sept. 2000

B.S. in Physics     Department of Physics, Shandong University

EMPLOYMENT

Jul. 2016 - Present

Professor      Department of Physics, Tsinghua University

Apr. 2013 - Jul. 2016

Associate Professor   Department of Physics, Tsinghua University

Apr. 2009 - Sept. 2013

Associate Professor   Institute of Physics, Chinese Academy of Sciences

Apr. 2007 - Mar. 2009

Postdoc Researcher   Institute for Solid State Physics, the University of Tokyo

Apr. 2006 - Mar. 2007

Postdoc Researcher   Department of Physics, the University of Tokyo

RESEARCH INTERESTS

  • Surface, interface and low-dimensional physics
  • Topological quantum materials and effects
  • Spintronics
  • Molecular beam epitaxy
  • Angle-resolved photoemission spectroscopy
  • Scanning tunneling microscopy

HONORS AND AWARDS

  • Clarivate Highly Cited Researcher (2017)
  • Yeh Chi-Sun Prize in Physics (2017)
  • Nishina Asia Award (2015)
  • National Award for Youth in Science and Technology (2013)
  • Sir Martin Wood China Prize (2013)
  • Outstanding Science and Technology Achievement Prize of Chinese Academy of Sciences (2012)
  • Lu Jia-Xi Prize of Chinese Academy of Sciences for Young Scientists (2011)
  • New Star Researcher of Institute of Physics, Chinese Academy of Sciences (2010)

INVITED PRESENTATIONS

  • Gordon Research Conference, Hong Kong, 2017
  • American Physical Society March Meeting, Baltimore, USA, 2016
  • American Physical Society March Meeting, Denver, USA, 2014
  • The 17th European Molecular Beam Epitaxy Workshop, Levi, Finland, 2013
  • The 12th Asia Pacific Physics Conference, Chiba, Japan, 2012
  • The 56th Magnetism and Magnetic Materials Conference, Scottsdale, USA, 2011
  • American Physical Society March Meeting, Dallas, USA, 2011

SELECTED PUBLICATIONS

  1. He, K.*; Wang Y.*; Xue Q. K.*, Topological Materials: Quantum Anomalous Hall System. Ann. Rev. Conden. Matter Phys. 2018, 9, 329-344.
  2. Jiang, G. Y.; Feng, Y.; Wu, W. X.; Li, S. R.; Bai, Y. H.; Li, Y. X.; Zhang, Q. H.; Gu, L.; Feng, X.; Zhang, D.; Song, C. L.; Wang, L. L.; Li, W.; Ma, X. C.; Xue, Q. K.; Wang, Y. Y.*; He, K.*, Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy. Chinese Physics Letters 2018, 35, 076802.
  3. Ou Y.; Liu C.; Jiang G.; Feng Y.; Zhao D.; Wu W.; Wang X.–X.; Li W.; Song C.; Wang L. –L.; Wang W.; Wu W.; Wang Y.*; He K.*;, Ma X.; and Xue Q.–K.; Enhancing the quantum anomalous Hall effect by magnetic codoping in a topological insulator, Advanced Materials 2017, 30, 1703062.
  4. Liu, C.; Zang, Y. Y.; Ruan, W.; Gong, Y.; He, K.*; Ma, X. C.; Xue, Q. K.; Wang, Y. Y.*, Dimensional Crossover-Induced Topological Hall Effect in a Magnetic Topological Insulator. Physical Review Letters 2017, 119, 196809.
  5. Zhang, Z. C.; Feng, X.; Wang, J.; Lian, B.; Zhang, J. S.; Chang, C. Z.; Guo, M. H.; Ou, Y. B.; Feng, Y.; Zhang, S. C.; He, K.*; Ma, X. C.; Xue, Q. K.; Wang, Y. Y.*, Magnetic quantum phase transition in Cr-doped Bi-2(SexTe1-x)(3) driven by the Stark effect. Nature Nanotechnology 2017, 12, 953-957.
  6. Chang, C.-Z.*; Tang, P.; Feng, X.; Li, K.; Ma, X.-C.; Duan, W.*; He, K.*; Xue, Q. -K., Band engineering of Dirac surface states in topological-insulator-base van der Waals heterostructures. Physical Review Letters 2015, 115, 136801.
  7. Feng, Y.; Feng, X.; Ou, Y.; Wang, J.; Liu, C.; Zhang, L.; Zhao, D.; Jiang, G.; Zhang, S.-C.; He, K.*; Ma, X.; Xue, Q.-K.; Wang, Y.*, Observation of the zero Hall plateau in a quantum anomalous Hall insulator. Physical Review Letters 2015, 115 (12), 126801.
  8. Chang, C.-Z.; Zhang, Z.; Li, K.; Feng, X.; Zhang, J.; Guo, M.; Feng, Y.; Wang, J.; Wang, L.-L.; Ma, X.-C.; Chen, X.; Wang, Y.*; He, K.*; Xue, Q.-K., Simultaneous Electrical-Field-Effect Modulation of Both Top and Bottom Dirac Surface States of Epitaxial Thin Films of Three-Dimensional Topological Insulators. Nano Letters 2015, 15 (2), 1090-1094.
  9. Wang, Z.; Wang, J.; Zang, Y.; Zhang, Q.; Shi, J.-A.; Jiang, T.; Gong, Y.; Song, C.-L.; Ji, S.-H.; Wang, L.-L.; Gu, L.; He, K.*; Duan, W.*; Ma, X.; Chen, X.; Xue, Q.-K., Molecular beam epitaxy-grown SnSe in the rock-salt structure: an artificial topological crystalline insulator material. Advanced Materials 2015, 27 (28), 4150-4154.
  10. Liao, J.; Ou, Y.; Feng, X.; Yang, S.; Lin, C.; Yang, W.; Wu, K.; He, K.*; Ma, X.; Xue, Q.-K.; Li, Y.*, Observation of Anderson localization in ultrathin films of three-dimensional topological insulators. Physical Review Letters 2015, 114 (21), 216601.
  11. Zhang, J.; Feng, X.; Xu, Y.; Guo, M.; Zhang, Z.; Ou, Y.; Feng, Y.; Li, K.; Zhang, H.; Wang, L.; Chen, X.; Gan, Z.; Zhang, S.-C.; He, K.*; Ma, X.; Xue, Q.-K.; Wang, Y.*, Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films. Physical Review B 2015, 91 (7), 075431.
  12. He, K.*; Wang, Y.; Xue, Q.-K., Quantum anomalous Hall effect. National Science Review 2014, 1 (1), 38-48.
  13. Zhang, Z.; Feng, X.; Guo, M.; Li, K.; Zhang, J.; Ou, Y.; Feng, Y.; Wang, L.; Chen, X.; He, K.*; Ma, X.; Xue, Q.; Wang, Y.*, Electrically tuned magnetic order and magnetoresistance in a topological insulator. Nature Communications 2014, 5 (9), 4915.
  14. Chang, C.-Z.; Tang, P.; Wang, Y.-L.; Feng, X.; Li, K.; Zhang, Z.; Wang, Y.; Wang, L.-L.; Chen, X.; Liu, C.; Duan, W.*; He, K.*; Ma, X.-C.; Xue, Q.-K., Chemical- potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms. Physical Review Letters 2014, 112 (5), 056801.
  15. Chang, C.-Z.; Zhang, J.; Feng, X.; Shen, J.; Zhang, Z.; Guo, M.; Li, K.; Ou, Y.; Wei, P.; Wang, L.-L.; Ji, Z.-Q.; Feng, Y.; Ji, S.; Chen, X.; Jia, J.; Dai, X.; Fang, Z.; Zhang, S.-C.; He, K.*; Wang, Y.*; Lu, L.; Ma, X.-C.; Xue, Q.-K.*, Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator. Science 2013, 340 (6129), 167-170.
  16. He, K.*; Ma, X.-C.; Chen, X.; Lu, L.; Wang, Y.-Y.*; Xue, Q.-K.*, From magnetically doped topological insulator to the quantum anomalous Hall effect. Chinese Physics B 2013, 22 (6), 067305.
  17. Chang, C.-Z.; Zhang, J.; Liu, M.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Qi, X.-L.; Zhang, S.-C.; Wang, Y.*; He, K.*; Ma, X.-C.; Xue, Q.-K., Thin films of magnetically doped topological insulator with carrier- independent long-range ferromagnetic order. Advanced Materials 2013, 25 (7), 1065-1070.
  18. Zhang, J.; Chang, C.-Z.; Tang, P.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-l.; Chen, X.; Liu, C.; Duan, W.; He. K.*; Xue, Q.-K.; Ma, X.; Wang, Y.*, Topology- driven magnetic quantum phase transition in topological insulators. Science 2013, 339 (6127), 1582-1586.
  19. Zhang, Z.; Feng, X.; Guo, M.; Ou, Y.; Zhang, J.; Li, K.; Wang, L.; Chen, X.; Xue, Q.; Ma, X.; He, K.*; Wang, Y.*, Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures. Physica Status Solidi-Rapid Research Letters 2013, 7 (1-2), 142-144.
  20. Liu, M.; Zhang, J.; Chang, C.-Z.; Zhang, Z.; Feng, X.; Li, K.; He, K.*; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. Physical Review Letters 2012, 108 (3), 036805.
  21. Zhang, J.; Chang, C.-Z.; Zhang, Z.; Wen, J.; Feng, X.; Li, K.; Liu, M.; He, K.*; Wang, L.; Chen, X.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators. Nature Communications 2011, 2(12), 574.
  22. Liu, M.; Chang, C.-Z.; Zhang, Z.; Zhang, Y.; Ruan, W.; He, K.*; Wang, L.-l.; Chen, X.; Jia, J.-F.; Zhang, S.-C.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit. Physical Review B 2011, 83 (16), 165440.
  23. Zhang, Y.; He, K.*; Chang, C.-Z.; Song, C.-L.; Wang, L.-L.; Chen, X.; Jia, J.-F.; Fang, Z.; Dai, X.; Shan, W.-Y.; Shen, S.-Q.; Niu, Q.; Qi, X.-L.; Zhang, S.-C.; Ma, X.-C.; Xue, Q.-K.*, Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit. Nature Physics 2010, 6 (8), 584-588.
  24. He, K.; Takeichi, Y.; Ogawa, M.; Okuda, T.; Moras, P.; Topwal, D.; Harasawa, A.; Hirahara, T.; Carbone, C.; Kakizaki, A.; Matsuda, I.*, Direct spectroscopic evidence of spin-dependent hybridization between Rashba-split surface states and quantum- well states. Physical Review Letters 2010, 104 (15), 156805.
  25. Zhang, Y.; Chang, C.-Z.; He, K.*; Wang, L.-L.; Chen, X.; Jia, J.-F.; Ma, X.-C.*; Xue, Q.-K., Doping effects of Sb and Pb in epitaxial topological insulator Bi2Se3 thin films: An in situ angle-resolved photoemission spectroscopy study. Applied Physics Letters 2010, 97 (19), 194102.
  26. He, K.*; Hirahara, T.; Okuda, T.; Hasegawa, S.; Kakizaki, A.; Matsuda, I., Spin polarization of quantum well states in Ag films induced by the Rashba effect at the surface. Physical Review Letters 2008, 101 (10), 107604.
  27. He, K.; Pan, M.; Wang, J.; Liu, H.; Jia, J.*; Xue, Q., Growth and magnetism of self-organized Co nanoplatelets on Si(111) surface. Surface and Interface Analysis 2006, 38 (6), 1028-1033.
  28. He, K.; Ma, L.-Y.; Ma, X.-C.; Jia, J.-F.; Xue, Q.-K.*, Two-dimensional growth of Fe thin films with perpendicular magnetic anisotropy on GaN(0001). Applied Physics Letters 2006, 88 (23), 232503.
  29. He, K.; Zhang, L.; Ma, X.; Jia, J.; Xue, Q.*; Qiu, Z., Growth and magnetism of ultrathin Fe films on Pt(100). Physical Review B 2005, 72 (15), 155432.